Bd238 datasheet

BD136 Series 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) te rminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the BD237/D. BD237G (NPN), BD234G,BD238G (PNP) Plastic Medium Power Bipolar Transistors. Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MAXIMUM SAFE OPERATING REGIONS Figure 4. THERMAL INFORMATION Figure 5. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 1000 I C - Collector Current - A 0·01 0·1 1·0 10 100 BD238: COMPLEMENTARY SILICON POWER TRANSISTORS: Inchange Semiconductor ... BD238: Silicon PNP Power Transistors: Unisonic Technologies: BD238 -80V, PNP TRANSISTOR: Continental Device Indi... BD238: EPITAXIAL SILICON POWER TRANSISTORS: New Jersey Semi-Conduct... BD238: COMPLEMENTARY SILICON POWER TRANSISTORS: Fairchild Semiconductor: BD238: Medium Power Linear and Switching BD243B, BD243C (NPN), BD244B, BD244C (PNP) 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Sustaining Voltage (Note 1)