The PS21A79 is a Dual-in-line Intelligent Power Module Transistor with 3-phase inverter and N-side open emitter structure. The P-side features drive circuit, high voltage high-speed level shifting and control supply under-voltage (UV) protection. IGBT-Inverter IGBT Modules are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IGBT-Inverter IGBT Modules. HYBRID IC FOR DRIVING TRANSISTOR MODULES, M57950L datasheet, M57950L circuit, M57950L data sheet : MITSUBISHI, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. This page introduces the Mitsubishi electric semiconductors and devices business. The Search function by type number and product category is available. Therefore, to satisfy these requirements, the insulated gate bipolar transistor (IGBT) was developed. The IGBT is a switching device designed to have the high-speed switching performance and gate voltage control of a power MOSFET as well as the high-voltage / large-current handling capacity of a bipolar transistor. Data Sheet 1SD536F2-CM1200E4C-34N Page 2 CT-Concept.com Important Notes This data sheet contains only product-specific data. For a detailed description, must-read application notes and common data that apply to the whole series, please refer to the “Description & Application Manual for 1SD536F2 SCALE High- Power IGBT Drivers”.